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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2270 DESCRIPTION *With TO-126 package *Low collector saturation voltage *High collector power dissipation APPLICATIONS *Strobo flash applications *Medimum power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IE IEM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Emitter current (DC) Emitter current-peak Ta=25 PC Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 50 20 8 5 8 -5 -8 1.0 W UNIT V V V A A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=10mA ;IB=0 IE=1mA ;IC=0 IC=4A; IB=0.1A IC=4A ; VCE=2V VCB=40V; IE=0 VEB=8V; IC=0 IC=0.5A ; VCE=2V IC=4A ; VCE=2V IC=0.5A ; VCE=2V IE=0;f=1MHz ; VCB=10V 140 70 MIN 20 8 2SC2270 TYP. MAX UNIT V V 1.0 1.5 0.1 0.1 450 V V A A 100 40 MHz pF hFE-1 Classifications A 140-240 B 200-330 C 300-450 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2270 Fig.2 Outline dimensions 3 |
Price & Availability of 2SC2270
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